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BSC036NE7NS3G


Part Number: BSC036NE7NS3G
Make: Infineon
15,000 In Stock.
Delivery in 5-9 Business Days
100% Warrantied Inventory (ISO 9001:2015 Certified)

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Available Quantity: 15,000
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Standard Package Quantity: 5,000
Date Code: 17+

Specifications : BSC036NE7NS3G

Avalanche Energy Rating (Eas) 260 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 3.6 mΩ
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
Manufacturer Infineon Technologies AG
Manufacturer Part Number BSC036NE7NS3G
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Description SMALL OUTLINE, R-PDSO-F5
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Packaging -
Pin Count 8
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON