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BSC059N04LSG


Price: $0.466 each   
Part Number: BSC059N04LSG
Make: Infineon
10,000 In Stock.
Delivery in 5-9 Business Days
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Available Quantity: 10,000
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Minimum: 5,000     Multiple Qty: 5,000
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Available Quantity: 10,000
Packaging: Tape and Reel
Date Code: 17+

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5,000 :   $0.482
10,000 :   $0.466

Specifications : BSC059N04LSG

Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 25 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (Abs) (ID) 73 A
Drain Current-Max (ID) 16 A
Drain-source On Resistance-Max 5.9 mΩ
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Manufacturer Infineon Technologies AG
Manufacturer Part Number BSC059N04LSG
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Description SMALL OUTLINE, R-PDSO-F5
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Packaging -
Pbfree Code Yes
Peak Reflow Temperature (Cel) 260
Pin Count 8
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 292 A
Qualification Status Not Qualified
Subcategory FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON