No Image
Not Yet Rated!

BSO211P


Part Number: BSO211P
Make: Infineon
15,000 In Stock.
Delivery in 5-9 Business Days
100% Warrantied Inventory (ISO 9001:2015 Certified)

Submit RFQ: BSO211P

Available Quantity: 15,000
Refresh
Standard Package Quantity: 2,500

Specifications : BSO211P

Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 28 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (Abs) (ID) 4.7 A
Drain Current-Max (ID) 4.7 A
Drain-source On Resistance-Max 67 mΩ
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
Manufacturer Infineon Technologies AG
Manufacturer Part Number BSO211P
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Description SMALL OUTLINE, R-PDSO-G8
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Packaging -
Part Package Code SOT
Pbfree Code No
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 8
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 18.8 A
Qualification Status Not Qualified
Subcategory Other Transistors
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON