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BSP125L6327


Part Number: BSP125L6327
Make: Infineon
12,000 In Stock.
Shipping From : New Jersey, USA
Shipping through : DHL, FedEx, UPS
5-7 Days to Ship

Specifications : BSP125L6327

Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (Abs) (ID) 120 mA
Drain Current-Max (ID) 120 mA
Drain-source On Resistance-Max 45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Manufacturer Infineon Technologies AG
Manufacturer Part Number BSP125L6327
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Description SMALL OUTLINE, R-PDSO-G4
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Packaging -
Pbfree Code Yes
Peak Reflow Temperature (Cel) 260
Pin Count 4
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.8 W
Pulsed Drain Current-Max (IDM) 480 mA
Qualification Status Not Qualified
Subcategory FET General Purpose Power
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Element Material SILICON
iodParts Shield
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Available Quantity: 12,000
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Standard Package Quantity: 1,000