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BSS123NH6327


Price: $0.05 each   
Part Number: BSS123NH6327
Make: Infineon
54,000 In Stock.
Delivery in 5-9 Business Days
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Available Quantity: 54,000
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Minimum: 6,000     Multiple Qty: 3,000
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Available Quantity: 54,000
Date Code: 17+

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6,000 :   $0.0549
12,000 :   $0.0533
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51,000 :   $0.05

Specifications : BSS123NH6327

Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (Abs) (ID) 190 mA
Drain Current-Max (ID) 190 mA
Drain-source On Resistance-Max 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 3.1 pF
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Manufacturer Infineon Technologies AG
Manufacturer Part Number BSS123NH6327
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Description SMALL OUTLINE, R-PDSO-G3
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Packaging -
Pbfree Code Yes
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 500 mW
Reference Standard AEC-Q101
Subcategory FET General Purpose Power
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON