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DMG1012UW-7


Price: $0.0538 each   
Part Number: DMG1012UW-7
Make: Diodes Inc.
300,000 In Stock.
Delivery in 5-9 Business Days
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Available Quantity: 300,000
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Minimum: 6,000     Multiple Qty: 3,000
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Available Quantity: 300,000
Date Code: 17+

Pricing

6,000 :   $0.0591
12,000 :   $0.0573
24,000 :   $0.0556
45,000 :   $0.0538

Specifications : DMG1012UW-7

Additional Feature HIGH RELIABILITY
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (Abs) (ID) 1 A
Drain Current-Max (ID) 1 A
Drain-source On Resistance-Max 450 mΩ
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Manufacturer Diodes Incorporated
Manufacturer Part Number DMG1012UW-7
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Description SMALL OUTLINE, R-PDSO-G3
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Packaging -
Pbfree Code Yes
Peak Reflow Temperature (Cel) 260
Pin Count 3
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 290 mW
Qualification Status Not Qualified
Subcategory FET General Purpose Powers
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON