FCP11N60F


Part Number: FCP11N60F
Make: On Semi
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Specifications : FCP11N60F

Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1490pF @ 25V
Manufacturer Part Number FCP11N60F
Manufacturer Standard Lead Time 4 Weeks
Mounting Type Through Hole
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-220-3
Packaging Tube
Power Dissipation (Max) 125W (Tc)
Rds On (Max) @ Id, Vgs 380mOhm @ 5.5A, 10V
Series SuperFET™
Supplier Device Package TO-220-3
Technology MOSFET (Metal Oxide)
Vgs (Max) ±30V
Vgs(th) (Max) @ Id 5V @ 250µA
Alternate Parts FCP11N60
iodParts Shield
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Standard Package Quantity: 1,000

Alternate Part(s)

Qty : 1000
$ 1.385 /ea