FQP65N06


Part Number: FQP65N06
Make: On Semi
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Specifications : FQP65N06

Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 25V
Manufacturer Part Number FQP65N06
Manufacturer Standard Lead Time 4 Weeks
Mounting Type Through Hole
Operating Temperature -55°C ~ 175°C (TJ)
Package / Case TO-220-3
Packaging Tube
Power Dissipation (Max) 150W (Tc)
Rds On (Max) @ Id, Vgs 16mOhm @ 32.5A, 10V
Series QFET®
Supplier Device Package TO-220-3
Technology MOSFET (Metal Oxide)
Vgs (Max) ±25V
Vgs(th) (Max) @ Id 4V @ 250µA
iodParts Shield
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