FQPF12N60C


Part Number: FQPF12N60C
Make: On Semi
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Specifications : FQPF12N60C

Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 25V
Manufacturer Part Number FQPF12N60C
Mounting Type Through Hole
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-220-3 Full Pack
Packaging Tube
Power Dissipation (Max) 51W (Tc)
Rds On (Max) @ Id, Vgs 650 mOhm @ 6A, 10V
Series QFET®
Supplier Device Package TO-220F
Technology MOSFET (Metal Oxide)
Vgs (Max) ±30V
Vgs(th) (Max) @ Id 4V @ 250µA
Alternate Parts FQPF12N60
iodParts Shield
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