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1.7 / 5 (Popularity Score)

FQPF9N90CT

N-Channel 900V 8A (Tc) 68W (Tc) Through Hole TO-220-3

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Part Number: FQPF9N90CT
Make: On Semi

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View all MOSFET- Metal Oxide Semiconductor Field Effect Transistors by On Semi

Components correct and fast shippment Thank you very much in particular to Richard because the stock was 7 units buy he finally was able to ship us 9 units. We will buy again for sure. The shippment was really fast.
JUNQUERA PEREZ, JUNQUERA PEREZ., Spain

Got us out of a pinch with parts we needed for a customer order. Parts arrived in a timely manner and was exactly what we ordered.
Donavan Thompson, Dekko Inc., United States

Excellent! The support given were amazing and the delivery was quick. The only problem, which is the reason for my 4 star review. is with your Packing List, since it doesn't show the full information needed in Brazil process (net weight, gross weight, volume). Please, if you can solve this, your rating will be 5 stars in the next orders.
Guilherme Soares, Guilherme Soares., Brazil

Easy to deal with. Parts delivered on time as stated. A little pricey but acceptable for my situation. Would recommend iodParts as a supplier.
John Dicroce, VOXX International Corp., United States

Very fast response, good parts, very good customer service.
Nathaly Cotrina, Urtech Manufacturing., United States

It's always a great experience, I ordered many times and I got timely delivery and satisfaction.
SWASTIK ELECTROTECH AUTOMATION, SWASTIK ELECTROTECH AUTOMATION., India

The treatment was very cordial and the materials arrived in a timely manner.
Nadia Napoli, Exemys S.R.L., Argentina

Quick Response and Polite Staff.
Mr. Durgadas Chavan, ICC Cable Communication Pvt. Ltd., India

iodParts, These guys are great. I got my order shipped ahead of schedule, and they promptly contacted me once there was a need for address correction.
Dmitry Dumanski, Baltelectron LLC, United States

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Specifications : FQPF9N90CT

Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drain to Source Voltage (Vdss)	900V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2730 pF @ 25 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Package	Tube
Package / Case	TO-220-3
Power Dissipation (Max)	68W (Tc)
Rds On (Max) @ Id, Vgs	1.4Ohm @ 4A, 10V
RoHS Status	ROHS3 Compliant
Series	QFET®
Standard Package	50
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 250µA

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Standard Package Quantity: 50

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