Part Number: GA50JT17-247
Make: GeneSiC
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Specifications : GA50JT17-247

Categories Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drain to Source Voltage (Vdss) 1700V
Drive Voltage (Max Rds On, Min Rds On) -
FET Feature -
FET Type -
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds -
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Manufacturer GeneSiC Semiconductor
Manufacturer Part Number GA50JT17-247
Manufacturer Standard Lead Time 18 Weeks
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Through Hole
Operating Temperature 175°C (TJ)
Package / Case TO-247-3
Packaging Tube
Power Dissipation (Max) 583W (Tc)
Rds On (Max) @ Id, Vgs 25 mOhm @ 50A
Series -
Standard Package 30
Supplier Device Package TO-247
Technology SiC (Silicon Carbide Junction Transistor)
Vgs (Max) -
Vgs(th) (Max) @ Id -
iodParts Shield
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Standard Package Quantity: 30