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IPD33CN10NGATMA1


Part Number: IPD33CN10NGATMA1
Make: Infineon
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RoHS Compliant
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Standard Package Quantity: 2,500

Specifications : IPD33CN10NGATMA1

Categories Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 50V
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Manufacturer Infineon Technologies
Manufacturer Part Number IPD33CN10NGATMA1
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Mounting Type Surface Mount
Operating Temperature -55°C ~ 175°C (TJ)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging Reel
Power Dissipation (Max) 58W (Tc)
Rds On (Max) @ Id, Vgs 33 mOhm @ 27A, 10V
Series OptiMOS?
Standard Package 2,500
Supplier Device Package PG-TO252-3
Technology MOSFET (Metal Oxide)
Vgs (Max) ?20V
Vgs(th) (Max) @ Id 4V @ 29µA