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IPI65R099C6


Part Number: IPI65R099C6
Make: Infineon
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Specifications : IPI65R099C6

Avalanche Energy Rating (Eas) 845 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain-source On Resistance-Max 99 m?
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
Manufacturer Infineon Technologies AG
Manufacturer Part Number IPI65R099C6
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Description IN-LINE, R-PSIP-T3
Package Shape RECTANGULAR
Package Style IN-LINE
Packaging -
Part Package Code TO-262AA
Pbfree Code Yes
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 115 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON