IPW65R080CFD
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IPW65R080CFD

FETs - Single PG-TO247-3 Through Hole


Part Number: IPW65R080CFD
Make: Infineon
242 In Stock.
Shipping From: HongKong, China
RoHS Compliant
100% Warrantied Inventory (ISO 9001:2015 Certified)

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Available Quantity: 242
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Standard Package Quantity: 240
Packaging: Tube

Specifications : IPW65R080CFD

Categories Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C 43.3A (Tc)
Drain to Source Voltage (Vdss) 700V
Drive Voltage (Max Rds On, Min Rds On) 10V
Expanded Description N-Channel 700V 43.3A (Tc) 391W (Tc) Through Hole PG-TO247-3
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5030pF @ 100V
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Manufacturer Infineon Technologies
Manufacturer Part Number IPW65R080CFD
Manufacturer Standard Lead Time 16 Weeks
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Through Hole
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-247-3
Packaging Tube
Power Dissipation (Max) 391W (Tc)
Rds On (Max) @ Id, Vgs 80 mOhm @ 17.6A, 10V
Series CoolMOS?
Standard Package 240
Supplier Device Package PG-TO247-3
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 4.5V @ 1.76mA