IRF5210LPBF

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IRF5210LPBF


Price: $1.943 each   
Part Number: IRF5210LPBF
Make: Infineon
900 In Stock.
Shipping From: Delaware, USA
Delivery in 5-9 Business Days.
RoHS Compliant
100% Warrantied Inventory (ISO 9001:2008 Certified)
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Available Quantity: 900
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Minimum: 650     Multiple Qty: 50
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Available Quantity: 900
Packaging: Tube
Date Code: 12+

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650 :   $1.943

Specifications : IRF5210LPBF

Categories Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Detailed Description P-Channel 100V 38A (Tc) 3.1W (Ta), 170W (Tc) Through Hole TO-262
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2780pF @ 25V
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Manufacturer Infineon Technologies
Manufacturer Part Number IRF5210LPBF
Manufacturer Standard Lead Time 26 Weeks
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Through Hole
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging Tube
Power Dissipation (Max) 3.1W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs 60 mOhm @ 38A, 10V
Series HEXFET®
Standard Package 1,000
Supplier Device Package TO-262
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 4V @ 250µA