No Image
1.4 / 5 (Popularity Score)

IPB027N10N3G


Part Number: IPB027N10N3G
Make: Infineon
3,000 In Stock.
Shipping From : New Jersey, USA
Shipping through : DHL, FedEx, UPS

Specifications : IPB027N10N3G

Avalanche Energy Rating (Eas) 1000 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (Abs) (ID) 120 A
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 2.7 mΩ
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Manufacturer Part Number IPB027N10N3G
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Description SMALL OUTLINE, R-PSSO-G2
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Part Package Code D2PAK
Pbfree Code Yes
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 4
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 480 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
iodParts Shield
100% Purchase Protection
Original Products | Secure Payments

Submit RFQ: IPB027N10N3G

Available Quantity: 3,000
Refresh
Standard Package Quantity: 1,000