IPB083N10N3 G
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IPB083N10N3 G


Price: $0.6 each   
Part Number: IPB083N10N3 G
Make: Infineon
4,000 In Stock.
Delivery in 5-9 Business Days
RoHS Compliant
100% Warrantied Inventory (ISO 9001:2015 Certified)
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Available Quantity: 4,000
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Minimum: 1,000     Multiple Qty: 1,000
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Available Quantity: 4,000
Packaging: Reel
Date Code: 17+

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1,000 :   $0.619
3,000 :   $0.6

Specifications : IPB083N10N3 G

Categories Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Expanded Description N-Channel 100V 80A (Tc) 125W (Tc) Surface Mount PG-TO263-2
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 50V
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Manufacturer Infineon Technologies
Manufacturer Part Number IPB083N10N3 G
Manufacturer Standard Lead Time 14 Weeks
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Surface Mount
Operating Temperature -55°C ~ 175°C (TJ)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging Reel
Power Dissipation (Max) 125W (Tc)
Rds On (Max) @ Id, Vgs 8.3 mOhm @ 73A, 10V
Series OptiMOS?
Standard Package 1,000
Supplier Device Package PG-TO263-2
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 3.5V @ 75µA