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IPB117N20NFD


Part Number: IPB117N20NFD
Make: Infineon
1,520 In Stock.
Shipping From : New Jersey, USA
Shipping through : DHL, FedEx, UPS
5-7 Days to Ship

Specifications : IPB117N20NFD

Avalanche Energy Rating (Eas) 375 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 84 A
Drain-source On Resistance-Max 11.7 mΩ
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Manufacturer Part Number IPB117N20NFD
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Description SMALL OUTLINE, R-PSSO-G2
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Packaging -
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 336 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
iodParts Shield
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Available Quantity: 1,520
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Standard Package Quantity: 1,000