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IPB180N04S4-01


Part Number: IPB180N04S4-01
Make: Infineon
3,000 In Stock.
Delivery in 5-9 Business Days
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Available Quantity: 3,000
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Standard Package Quantity: 1,000
Date Code: 17+

Specifications : IPB180N04S4-01

Additional Feature ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 550 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (Abs) (ID) 180 A
Drain Current-Max (ID) 180 A
Drain-source On Resistance-Max 1.3 mΩ
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G6
Manufacturer Infineon Technologies AG
Manufacturer Part Number IPB180N04S4-01
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Description SMALL OUTLINE, R-PSSO-G6
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Packaging -
Part Package Code TO-263
Pbfree Code Yes
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 7
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 188 W
Pulsed Drain Current-Max (IDM) 720 A
Qualification Status Not Qualified
Subcategory FET General Purpose Power
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON