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IPD040N03LG


Part Number: IPD040N03LG
Make: Infineon
30,000 In Stock.
Delivery in 5-9 Business Days
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Available Quantity: 30,000
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Standard Package Quantity: 2,500
Date Code: 17+

Specifications : IPD040N03LG

Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 60 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (Abs) (ID) 90 A
Drain Current-Max (ID) 89 A
Drain-source On Resistance-Max 5.9 mΩ
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Manufacturer Infineon Technologies AG
Manufacturer Part Number IPD040N03LG
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Description SMALL OUTLINE, R-PSSO-G2
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Packaging -
Part Package Code TO-252
Pbfree Code Yes
Peak Reflow Temperature (Cel) 260
Pin Count 4
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 79 W
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Subcategory FET General Purpose Power
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON