No Image
Not Yet Rated!

IPD100N06S4-03


Part Number: IPD100N06S4-03
Make: Infineon
Out Of Stock Re-confirm Stock
Delivery in 5-9 Business Days
100% Warrantied Inventory (ISO 9001:2015 Certified)

Submit RFQ: IPD100N06S4-03

Standard Package Quantity: 2,500

Specifications : IPD100N06S4-03

Additional Feature ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 300 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (Abs) (ID) 100 A
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 3.5 mΩ
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Manufacturer Infineon Technologies AG
Manufacturer Part Number IPD100N06S4-03
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Description SMALL OUTLINE, R-PSSO-G2
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Packaging -
Part Package Code TO-252
Pbfree Code Yes
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 4
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Subcategory FET General Purpose Power
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON