IPP029N06NAKSA1
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IPP029N06NAKSA1


Price: $1.621 each   
Part Number: IPP029N06NAKSA1
Make: Infineon
650 In Stock.
Delivery in 5-9 Business Days
RoHS Compliant
100% Warrantied Inventory (ISO 9001:2015 Certified)
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Available Quantity: 650
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Minimum: 200     Multiple Qty: 50
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Available Quantity: 650
Packaging: Tube
Date Code: 17+

Pricing

200 :   $1.671
400 :   $1.621

Specifications : IPP029N06NAKSA1

Categories Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C 24A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Expanded Description N-Channel 60V 24A (Ta), 100A (Tc) 3W (Ta), 136W (Tc) Through Hole PG-TO-220-3
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 30V
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Manufacturer Infineon Technologies
Manufacturer Part Number IPP029N06NAKSA1
Manufacturer Standard Lead Time 14 Weeks
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Through Hole
Operating Temperature -55°C ~ 175°C (TJ)
Package / Case TO-220-3
Packaging Tube
Power Dissipation (Max) 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs 2.9 mOhm @ 100A, 10V
Series OptiMOS?
Standard Package 50
Supplier Device Package PG-TO-220-3
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 2.8V @ 75µA