Additional Feature | AVALANCHE RATED |
Avalanche Energy Rating (Eas) | 165 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (Abs) (ID) | 90 A |
Drain Current-Max (ID) | 90 A |
Drain-source On Resistance-Max | 4 mΩ |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e3 |
Manufacturer Part Number | IPP040N06N3G |
Moisture Sensitivity Level | 1 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 175 °C |
Package Body Material | PLASTIC/EPOXY |
Package Description | FLANGE MOUNT, R-PSFM-T3 |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Packaging | - |
Part Package Code | TO-220AB |
Pbfree Code | Yes |
Peak Reflow Temperature (Cel) | 260 |
Pin Count | 3 |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 188 W |
Pulsed Drain Current-Max (IDM) | 360 A |
Qualification Status | Not Qualified |
Surface Mount | NO |
Terminal Finish | MATTE TIN |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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