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| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 165 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60 V |
| Drain Current-Max (Abs) (ID) | 90 A |
| Drain Current-Max (ID) | 90 A |
| Drain-source On Resistance-Max | 4 mΩ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Manufacturer | Infineon Technologies AG |
| Manufacturer Part Number | IPP040N06N3G |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 °C |
| Package Body Material | PLASTIC/EPOXY |
| Package Description | FLANGE MOUNT, R-PSFM-T3 |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Packaging | - |
| Part Package Code | TO-220AB |
| Pbfree Code | Yes |
| Peak Reflow Temperature (Cel) | 260 |
| Pin Count | 3 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 188 W |
| Pulsed Drain Current-Max (IDM) | 360 A |
| Qualification Status | Not Qualified |
| Subcategory | FET General Purpose Power |
| Surface Mount | NO |
| Terminal Finish | MATTE TIN |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
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