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IPP072N10N3G


Price: $1.015 each   
Part Number: IPP072N10N3G
Make: Infineon
1,500 In Stock.
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Available Quantity: 1,500
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Available Quantity: 1,500
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500 :   $1.08
1,000 :   $1.048
1,500 :   $1.015

Specifications : IPP072N10N3G

Avalanche Energy Rating (Eas) 160 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (Abs) (ID) 80 A
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 7.2 mΩ
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Manufacturer Infineon Technologies AG
Manufacturer Part Number IPP072N10N3G
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Description FLANGE MOUNT, R-PSFM-T3
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Packaging -
Part Package Code TO-220AB
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 320 A
Qualification Status Not Qualified
Subcategory FET General Purpose Power
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON