IPT020N10N3ATMA1
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IPT020N10N3ATMA1


Part Number: IPT020N10N3ATMA1
Make: Infineon
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RoHS Compliant
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Standard Package Quantity: 2,000

Specifications : IPT020N10N3ATMA1

Categories Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C 300A (Tc)
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Expanded Description N-Channel 100V 300A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 156nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 11200pF @ 50V
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Manufacturer Infineon Technologies
Manufacturer Part Number IPT020N10N3ATMA1
Manufacturer Standard Lead Time 10 Weeks
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Surface Mount
Operating Temperature -55°C ~ 175°C (TJ)
Package / Case 8-PowerSFN
Packaging Reel
Power Dissipation (Max) 375W (Tc)
Rds On (Max) @ Id, Vgs 2 mOhm @ 150A, 10V
Series OptiMOS?
Standard Package 1
Supplier Device Package PG-HSOF-8-1
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 3.5V @ 272µA