IRFB4610
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IRFB4610


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Standard Package Quantity: 50

Specifications : IRFB4610

Categories Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C 73A (Tc)
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3550pF @ 50V
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Manufacturer Infineon Technologies
Manufacturer Part Number IRFB4610
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Through Hole
Operating Temperature -55°C ~ 175°C (TJ)
Package / Case TO-220-3
Packaging Tube
Power Dissipation (Max) 190W (Tc)
Rds On (Max) @ Id, Vgs 14 mOhm @ 44A, 10V
Series HEXFET®
Standard Package 50
Supplier Device Package TO-220AB
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 4V @ 100µA