IRFBG30
4 / 5 (3 ratings)

IRFBG30

FETs - Single TO-220AB Through Hole


Part Number: IRFBG30
Make: Vishay
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Specifications : IRFBG30

Categories Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Drain to Source Voltage (Vdss) 1000V (1kV)
Expanded Description N-Channel 1000V (1kV) 3.1A (Tc) 125W (Tc) Through Hole TO-220AB
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 980pF @ 25V
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Manufacturer Vishay Siliconix
Manufacturer Part Number IRFBG30
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Through Hole
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-220-3
Packaging Tube
Power Dissipation (Max) 125W (Tc)
Rds On (Max) @ Id, Vgs 5 Ohm @ 1.9A, 10V
Series -
Standard Package 1,000
Supplier Device Package TO-220AB
Technology MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id 4V @ 250µA
Alternate Parts IRFBG30PBF
iodParts Shield
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Standard Package Quantity: 1,000

Alternate Part(s)

IRFBG30PBF
Qty : 6000
USD 1.193 /ea