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IRFP4668PBF

N-Channel 200V 130A (Tc) 520W (Tc) Through Hole


Part Number: IRFP4668PBF
Make: Infineon
31,375 In Stock.
7-10 Days to Ship
Shipping From : Delaware, USA

Specifications : IRFP4668PBF

Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 10720 pF @ 50 V
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C ~ 175°C (TJ)
Package Tube
Package / Case TO-247
Power Dissipation (Max) 520W (Tc)
Rds On (Max) @ Id, Vgs 9.7mOhm @ 81A, 10V
RoHS Status ROHS3 Compliant
Series HEXFET®
Standard Package 25
Technology MOSFET (Metal Oxide)
Vgs (Max) ±30V
Vgs(th) (Max) @ Id 5V @ 250µA
iodParts Shield
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Available Quantity: 31,375
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Standard Package Quantity: 25
Packaging: Tube

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