Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drain to Source Voltage (Vdss) | 75V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 6920 pF @ 50 V |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 175°C (TJ) |
Package | Tube |
Package / Case | TO-262-3 |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 4.1mOhm @ 75A, 10V |
RoHS Status | ROHS3 Compliant |
Series | HEXFET® |
Standard Package | 50 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 4V @ 150µA |
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