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LZP40N10


Part Number: LZP40N10
Make: Lite-On
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Specifications : LZP40N10

Avalanche Energy Rating (Eas) 550 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 26 m?
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Manufacturer Lite-On Semiconductor Corporation
Manufacturer Part Number LZP40N10
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Description FLANGE MOUNT, R-PSFM-T3
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Packaging -
Part Package Code TO-220AB
Pin Count 3
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 200 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON