TN2106N3-G
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TN2106N3-G


Part Number: TN2106N3-G
Make: Microchip
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Shipping From: Delaware, USA
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Standard Package Quantity: 1,000

Specifications : TN2106N3-G

Categories Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C 300mA (Tj)
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Manufacturer Microchip Technology
Manufacturer Part Number TN2106N3-G
Manufacturer Standard Lead Time 5 Weeks
Mounting Type Through Hole
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Packaging Bulk Pack
Power Dissipation (Max) 740mW (Tc)
Rds On (Max) @ Id, Vgs 2.5 Ohm @ 500mA, 10V
Series -
Supplier Device Package TO-92-3
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 2V @ 1mA