No Image
Not Rated Yet!

PUMD6,115


Part Number: PUMD6,115
Make: NXP / Nexperia
543,000 In Stock.
Shipping From : New Jersey, USA
Shipping through : DHL, FedEx, UPS
5-7 Days to Ship

Specifications : PUMD6,115

Additional Feature BUILT IN BIAS RESISTOR
Collector Current-Max (IC) 100 mA
Collector-Base Capacitance-Max 3.5 pF
Collector-Emitter Voltage-Max 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 200
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Keywords 9340 554 30115
Manufacturer Package Code SOT363
Manufacturer Part Number PUMD6,115
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Description SMALL OUTLINE, R-PDSO-G6
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Packaging -
Part Package Code TSSOP
Peak Reflow Temperature (Cel) 260
Pin Count 6
Polarity/Channel Type NPN AND PNP
Power Dissipation Ambient-Max 400 mW
Power Dissipation-Max (Abs) 200 mW
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
VCEsat-Max 300 mV
iodParts Shield
100% Purchase Protection
Original Products | Secure Payments

Submit RFQ: PUMD6,115

Available Quantity: 543,000
Refresh
Standard Package Quantity: 3,000