RN2310(TE85L,F)
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RN2310(TE85L,F)


Price: $0.0562 each   
Part Number: RN2310(TE85L,F)
Make: Toshiba
12,000 In Stock.
Delivery in 5-9 Business Days
RoHS Compliant
100% Warrantied Inventory (ISO 9001:2015 Certified)
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Available Quantity: 12,000
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Minimum: 3,000     Multiple Qty: 3,000
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Available Quantity: 12,000
Packaging: Reel

Pricing

3,000 :   $0.0696
6,000 :   $0.058
12,000 :   $0.0562

Specifications : RN2310(TE85L,F)

Categories Discrete Semiconductor Products
Current - Collector (Ic) (Max) 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Expanded Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount USM
Frequency - Transition 200MHz
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Part Number RN2310(TE85L,F)
Manufacturer Standard Lead Time 16 Weeks
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Packaging Reel
Power - Max 100mW
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) -
Series -
Standard Package 3,000
Supplier Device Package USM
Transistor Type PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V