SI2309CDS-T1-GE3
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SI2309CDS-T1-GE3


Price: $0.181 each   
Part Number: SI2309CDS-T1-GE3
Make: Vishay
66,000 In Stock.
Delivery in 5-9 Business Days
RoHS Compliant
100% Warrantied Inventory (ISO 9001:2015 Certified)
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Available Quantity: 66,000
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Minimum: 3,000     Multiple Qty: 3,000
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Available Quantity: 66,000
Packaging: Reel
Date Code: 17+

Pricing

3,000 :   $0.199
6,000 :   $0.193
9,000 :   $0.187
15,000 :   $0.181

Specifications : SI2309CDS-T1-GE3

Categories Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 4.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 30V
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Manufacturer Vishay Siliconix
Manufacturer Part Number SI2309CDS-T1-GE3
Manufacturer Standard Lead Time 33 Weeks
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Reel
Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs 345 mOhm @ 1.25A, 10V
Series TrenchFET®
Standard Package 3,000
Supplier Device Package SOT-23-3 (TO-236)
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 3V @ 250µA