Datasheet
SI2312BDS-T1-GE3
N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23
Part Number:
SI2312BDS-T1-GE3
Make: Vishay
Make: Vishay
45,000 In Stock.
7-10 Days to Ship
Specifications : SI2312BDS-T1-GE3
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Mounting Type | Surface Mount |
| Number of Pins | 3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | SOT-23 |
| Power Dissipation (Max) | 750mW (Ta) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 5A, 4.5V |
| RoHS Status | ROHS3 Compliant |
| Series | TrenchFET® |
| Standard Package | 3,000 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 850mV @ 250µA |
|
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Standard Package Quantity: 3,000
Packaging: Reel
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