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SI2319DS-T1-E3

P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount


Part Number: SI2319DS-T1-E3
Make: Vishay
15,000 In Stock.
7-10 Days to Ship
Shipping From : Delaware, USA

Specifications : SI2319DS-T1-E3

Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 20 V
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C ~ 150°C (TJ)
Package Tape & Reel (TR)
Package / Case SOT-23
Power Dissipation (Max) 750mW (Ta)
Rds On (Max) @ Id, Vgs 82mOhm @ 3A, 10V
RoHS Status ROHS3 Compliant
Series TrenchFET®
Standard Package 3,000
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 3V @ 250µA
iodParts Shield
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Available Quantity: 15,000
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Standard Package Quantity: 3,000
Packaging: Reel

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