3.1 / 5 (Popularity Score)

SI2337DS-T1-GE3

P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)


Part Number: SI2337DS-T1-GE3
Make: Vishay
2,787 In Stock.
7-10 Days to Ship
Shipping From : Delaware, USA

Specifications : SI2337DS-T1-GE3

Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 40V
Mounting Type Surface Mount
Operating Temperature -50°C ~ 150°C (TJ)
Package / Case SOT
Packaging Reel
Power Dissipation (Max) 760mW (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs 270mOhm @ 1.2A, 10V
RoHS Status ROHS3 Compliant
Series TrenchFET®
Standard Package 3,000
Supplier Device Package SOT-23-3 (TO-236)
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 4V @ 250µA
iodParts Shield
100% Purchase Protection
Original Products | Secure Payments

Submit RFQ: SI2337DS-T1-GE3

Available Quantity: 2,787
Refresh
Standard Package Quantity: 3,000
Packaging: Reel

Recommended Parts

SI4835DDY-T1-GE3
Qty : 2456
$ 1.767 /ea

SI2312BDS-T1-GE3
Qty : 2944
$ 0.319 /ea

SI7326DN-T1-GE3
Qty : 2971
$ 0.359 /ea

SISA12ADN-T1-GE3
Qty : 761
$ 0.662 /ea

SI2302DDS-T1-GE3
Qty : 2737
$ 0.236 /ea