SI7129DN-T1-GE3
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SI7129DN-T1-GE3


Price: $0.672 each   
Part Number: SI7129DN-T1-GE3
Make: Vishay
9,000 In Stock.
Delivery in 5-9 Business Days
RoHS Compliant
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Available Quantity: 9,000
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Available Quantity: 9,000
Packaging: Reel
Date Code: 17+

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Specifications : SI7129DN-T1-GE3

Categories Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Expanded Description P-Channel 30V 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3345pF @ 15V
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Manufacturer Vishay Siliconix
Manufacturer Part Number SI7129DN-T1-GE3
Manufacturer Standard Lead Time 15 Weeks
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Surface Mount
Operating Temperature -50°C ~ 150°C (TJ)
Package / Case PowerPAK® 1212-8
Packaging Reel
Power Dissipation (Max) 3.8W (Ta), 52.1W (Tc)
Rds On (Max) @ Id, Vgs 11.4 mOhm @ 14.4A, 10V
Series TrenchFET®
Standard Package 1
Supplier Device Package PowerPAK® 1212-8
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 2.8V @ 250µA