SI8429DB-T1-E1


Part Number: SI8429DB-T1-E1
Make: Vishay
12,000 In Stock.
Shipping From : New Jersey, USA
Shipping through : DHL, FedEx, UPS
5-7 Days to Ship

Specifications : SI8429DB-T1-E1

Current - Continuous Drain (Id) @ 25°C 11.7A (Tc)
Drain to Source Voltage (Vdss) 8V
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 26nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 1640pF @ 4V
Lead Free Status / RoHS Status RoHS Compliant
Manufacturer Part Number SI8429DB-T1-E1
Manufacturer Standard Lead Time 33 Weeks
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case 4-XFBGA, CSPBGA
Packaging Reel
Power Dissipation (Max) 2.77W (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs 35mOhm @ 1A, 4.5V
Series TrenchFET®
Standard Package 3,000
Supplier Device Package 4-Microfoot
Technology MOSFET (Metal Oxide)
Vgs (Max) ?5V
Vgs(th) (Max) @ Id 800mV @ 250µA
iodParts Shield
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Available Quantity: 12,000
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Standard Package Quantity: 3,000
Packaging: Reel
Date Code: 17+