SIA449DJ-T1-GE3


Part Number: SIA449DJ-T1-GE3
Make: Vishay
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Specifications : SIA449DJ-T1-GE3

Categories Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2140pF @ 15V
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Manufacturer Vishay Siliconix
Manufacturer Part Number SIA449DJ-T1-GE3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case PowerPAK® SC-70-6
Packaging Reel
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs 20 mOhm @ 6A, 10V
Series TrenchFET®
Standard Package 3,000
Supplier Device Package PowerPAK® SC-70-6 Single
Technology MOSFET (Metal Oxide)
Vgs (Max) ±12V
Vgs(th) (Max) @ Id 1.5V @ 250µA
iodParts Shield
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Standard Package Quantity: 3,000