SIR172DP-T1-GE3


Part Number: SIR172DP-T1-GE3
Make: Vishay
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Specifications : SIR172DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 997pF @ 15V
Manufacturer Part Number SIR172DP-T1-GE3
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case PowerPAK® SO-8
Packaging Tape & Reel (TR) 
Power Dissipation (Max) 3.9W (Ta), 29.8W (Tc)
Rds On (Max) @ Id, Vgs 8.9 mOhm @ 16.1A, 10V
Series TrenchFET®
Supplier Device Package PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 2.5V @ 250µA
iodParts Shield
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