SIS412DN-T1-GE3
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SIS412DN-T1-GE3


Price: $0.197 each   
Part Number: SIS412DN-T1-GE3
Make: Vishay
24,000 In Stock.
Delivery in 5-9 Business Days
RoHS Compliant
100% Warrantied Inventory (ISO 9001:2015 Certified)
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100% Purchase Protection
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Available Quantity: 24,000
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Available Quantity: 24,000
Packaging: Reel
Date Code: 17+

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3,000 :   $0.21
6,000 :   $0.203
15,000 :   $0.197

Specifications : SIS412DN-T1-GE3

Categories Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Expanded Description N-Channel 30V 12A (Tc) 3.2W (Ta), 15.6W (Tc) Surface Mount PowerPAK® 1212-8
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 435pF @ 15V
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Manufacturer Vishay Siliconix
Manufacturer Part Number SIS412DN-T1-GE3
Manufacturer Standard Lead Time 15 Weeks
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case PowerPAK® 1212-8
Packaging Reel
Power Dissipation (Max) 3.2W (Ta), 15.6W (Tc)
Rds On (Max) @ Id, Vgs 24 mOhm @ 7.8A, 10V
Series TrenchFET®
Standard Package 1
Supplier Device Package PowerPAK® 1212-8
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 2.5V @ 250µA