Part Number: SIS452DN-T1-GE3
Make: Vishay
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Specifications : SIS452DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 6V
Lead Free Status / RoHS Status RoHS Compliant
Manufacturer Part Number SIS452DN-T1-GE3
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case PowerPAK® 1212-8
Packaging Reel
Power Dissipation (Max) 3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs 3.25mOhm @ 20A, 10V
Series TrenchFET®
Standard Package 3,000
Supplier Device Package PowerPAK® 1212-8
Technology MOSFET (Metal Oxide)
Vgs (Max) ?20V
Vgs(th) (Max) @ Id 2.2V @ 250µA
iodParts Shield
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Standard Package Quantity: 3,000