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SPU02N60C3


Price: $0.584 each   
Part Number: SPU02N60C3
Make: Infineon
7,500 In Stock.
Delivery in 5-9 Business Days
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Available Quantity: 7,500
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Available Quantity: 7,500
Date Code: 17+

Pricing

1,500 :   $0.622
3,000 :   $0.603
4,500 :   $0.584

Specifications : SPU02N60C3

Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 50 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (Abs) (ID) 1.8 A
Drain Current-Max (ID) 1.8 A
Drain-source On Resistance-Max 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Manufacturer Infineon Technologies AG
Manufacturer Part Number SPU02N60C3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Description IN-LINE, R-PSIP-T3
Package Shape RECTANGULAR
Package Style IN-LINE
Packaging -
Part Package Code TO-251AA
Pbfree Code Yes
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 5.4 A
Qualification Status Not Qualified
Subcategory FET General Purpose Power
Surface Mount NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON