No Image
Not Yet Rated!

STP5NB80


100% Warrantied Inventory (ISO 9001:2015 Certified)

Submit RFQ: STP5NB80


Specifications : STP5NB80

Additional Feature HIGH VOLTAGE
Avalanche Energy Rating (Eas) 300 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (Abs) (ID) 5 A
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 2.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Keywords 5A, 800V, 2.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
Manufacturer STMicroelectronics
Manufacturer Part Number STP5NB80
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Description FLANGE MOUNT, R-PSFM-T3
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Packaging -
Part Package Code TO-220AB
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Subcategory FET General Purpose Power
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON