STP80NE06-10
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STP80NE06-10


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Standard Package Quantity: 50

Specifications : STP80NE06-10

Categories Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 10000pF @ 25V
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Manufacturer STMicroelectronics
Manufacturer Part Number STP80NE06-10
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Through Hole
Operating Temperature 175°C (TJ)
Package / Case TO-220-3
Packaging Tube
Power Dissipation (Max) 150W (Tc)
Rds On (Max) @ Id, Vgs 10 mOhm @ 40A, 10V
Series -
Standard Package 50
Supplier Device Package TO-220AB
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 4V @ 250µA