TJ15S06M3L(T6L1,NQ

FETs - Single DPAK+ Surface Mount


Part Number: TJ15S06M3L(T6L1,NQ
Make: Toshiba
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Key Features:-

  • •  AEC-Q101 qualified
  • •  Low drain-source on-resistance: RDS(ON) = 38.5 mΩ (typ.) (VGS = -10 V)
  • •  Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)
  • •  Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)
  • •  Storage temperature range  −55 to 175 °C
  • •  Channel temperature 175 °C 

Specifications : TJ15S06M3L(T6L1,NQ

Categories Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C 15A (Ta)
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1770pF @ 10V
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Part Number TJ15S06M3L(T6L1,NQ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Surface Mount
Operating Temperature 175°C (TJ)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging Reel
Power Dissipation (Max) 41W (Tc)
Rds On (Max) @ Id, Vgs 50 mOhm @ 7.5A, 10V
Series U-MOSVI
Standard Package 2,000
Supplier Device Package DPAK+
Technology MOSFET (Metal Oxide)
Vgs (Max) +10V, -20V
Vgs(th) (Max) @ Id 3V @ 1mA
iodParts Shield
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Standard Package Quantity: 2,000