TJ8S06M3L(T6L1,NQ)
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TJ8S06M3L(T6L1,NQ)


Part Number: TJ8S06M3L(T6L1,NQ)
Make: Toshiba
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Delivery in 5-9 Business Days
RoHS Compliant
100% Warrantied Inventory (ISO 9001:2015 Certified)

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Standard Package Quantity: 2,000

Specifications : TJ8S06M3L(T6L1,NQ)

Categories Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Drain to Source Voltage (Vdss) 60V
Expanded Description P-Channel 60V 8A (Ta) 27W (Tc) Surface Mount DPAK+
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 10V
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Part Number TJ8S06M3L(T6L1,NQ)
Manufacturer Standard Lead Time 16 Weeks
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Surface Mount
Operating Temperature 175°C (TJ)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging Reel
Power Dissipation (Max) 27W (Tc)
Rds On (Max) @ Id, Vgs 104 mOhm @ 4A, 10V
Series U-MOSVI
Standard Package 2,000
Supplier Device Package DPAK+
Technology MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id 3V @ 1mA