TK2Q60D(Q)

FETs - Single PW-MOLD2 Through Hole


Part Number: TK2Q60D(Q)
Make: Toshiba
481 In Stock.
Shipping From : New Jersey, USA
Shipping through : DHL, FedEx, UPS
5-7 Days to Ship

Key Features:-

  • • Low drain-source ON-resistance: RDS (ON) = 3.2 Ω(typ.)
  • • Storage temperature range  −55 to 150 °C
  • • Channel temperature 150 °C 
  • • High forward transfer admittance: |Yfs| = 1.0 S (typ.)
  • • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
  • • Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

Specifications : TK2Q60D(Q)

Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 25V
Lead Free Status / RoHS Status RoHS Compliant
Manufacturer Part Number TK2Q60D(Q)
Mounting Type Through Hole
Operating Temperature 150°C (TJ)
Package / Case TO-251-3 Stub Leads, IPak
Packaging Bulk Pack
Power Dissipation (Max) 60W (Tc)
Rds On (Max) @ Id, Vgs 4.3 Ohm @ 1A, 10V
Series ?-MOSVII
Standard Package 200
Supplier Device Package PW-MOLD2
Technology MOSFET (Metal Oxide)
Vgs (Max) ?30V
Vgs(th) (Max) @ Id 4.4V @ 1mA
iodParts Shield
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Available Quantity: 481
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Standard Package Quantity: 200
Packaging: Bulk Pack
Date Code: 18+