TK42A12N1,S4X
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TK42A12N1,S4X

FETs - Single TO-220SIS Through Hole


Part Number: TK42A12N1,S4X
Make: Toshiba
3,000 In Stock.
Shipping From : New Jersey, USA
Shipping through : DHL, FedEx, UPS
5-7 Days to Ship

Key Features:-

  • •  Low drain-source on-resistance: RDS(ON) = 7.8 mΩ (typ.) (VGS = 10 V)
  • •  Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)
  • •  Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
  • •  Storage temperature 55 to 150 °C
  • •  Single-pulse avalanche energy 92MJ
  • •  Channel-to-case thermal resistance 3.57 °C/W

 


Specifications : TK42A12N1,S4X

Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drain to Source Voltage (Vdss) 120V
Drive Voltage (Max Rds On, Min Rds On) 10V
Expanded Description N-Channel 120V 42A (Tc) 35W (Tc) Through Hole TO-220SIS
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 60V
Lead Free Status / RoHS Status RoHS Compliant
Manufacturer Part Number TK42A12N1,S4X
Manufacturer Standard Lead Time 12 Weeks
Mounting Type Through Hole
Operating Temperature 150°C (TJ)
Package / Case TO-220-3 Full Pack, Isolated Tab
Packaging Tube
Power Dissipation (Max) 35W (Tc)
Rds On (Max) @ Id, Vgs 9.4 mOhm @ 21A, 10V
Series U-MOSVIII-H
Standard Package 50
Supplier Device Package TO-220SIS
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 4V @ 1mA
iodParts Shield
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Available Quantity: 3,000
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Standard Package Quantity: 50
Packaging: Tube
Date Code: 17+